June 1999
Si4953DY*
Dual P-Channel Enhancement Mode MOSFET
General Description
These P-Channel Enhancement Mode MOSFETs are
produced using Fairchild Semiconductor's advance
process that has been especially tailored to minimize on-
state resistance and yet maintain superior switching
performance.
These devices are well suited for low voltage and battery
powered applications where low in-line power loss and
fast switching are required.
Applications
Battery switch
Load switch
Motor controls
Features
-4.9 A, -30 V. RDS(on) = 0.053 Ω @ VGS = -10 V
RDS(on) = 0.095 Ω @ VGS = -4.5 V.
Low gate charge.
Fast switching speed.
High power and current handling capability.
'
'
'
'
62
*
6
*
6
$EVROXWH 0D[LPXP 5DWLQJV R
ÃÃÃÃÃÃÃU $2!$ 8ÃyrÃur
vrÃrq
6\PERO
W'66
W*66
D'
Q'
3DUDPHWHU
9
hvT
prÃWyhtr
BhrT
prÃWyhtr
9
hvÃ8
r Ã8vÃ
ÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃIrà h
ÃQyrq
Qr
Ã9vvhvÃs
Ã9hyÃPr
hv
Qr
Ã9vvhvÃs
ÃTvtyrÃPr
hvÃÃÃÃÃÃÃÃÃÃÃÃIrà h
ÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃIrà i
ÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃIrà p
U-ÃU67*
Pr
hvtÃhqÃT
htrÃEpvÃUrr
h
rÃShtr
7KHUPDO &KDUDFWHULVWLFV
Sθ-$
Sθ-&
Uur
hyÃSrvhprÃEpv6ivr
Uur
hyÃSrvhprÃEpv8hrÃÃÃÃÃÃÃÃÃÃÃÃIrÃ
5DWLQJV
"
±!
#(
"
!
%
(
$$ÃÃ $
%!$
#
8QLWV
W
W
6
X
°8
°8X
°8X
3DFNDJH 0DUNLQJ DQG 2UGHULQJ ,QIRUPDWLRQ
9rvprÃHh
xvt
9rvpr
SrryÃTvr
#($"
Tv#($"9`
"¶¶
9vrÃhqÃhshp
vtÃ
prÃiwrpÃÃpuhtrÃvuÃ
v
Ãvsvphv
©1999 Fairchild Semiconductor Corporation
UhrÃvqu
!
4XDQWLW\
!$Ãv
Si4953DY Rev. A