UBA1710M Ver la hoja de datos (PDF) - Philips Electronics
Número de pieza
componentes Descripción
Fabricante
UBA1710M Datasheet PDF : 12 Pages
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Philips Semiconductors
Modulator for GaAs power amplifiers
Product specification
UBA1710M
CHARACTERISTICS
VCC = VDD = 4.8 V; Tamb = 25 °C; unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
Supplies
ICC + IDD
peak supply current
Istb
standby current
Power MOS 1
RDSon1
on resistance
Power MOS 2
RDSon2
on resistance
Clock circuit
fclk
clock frequency
Voltage tripler
VPo
VR(p-p)
output voltage
amplitude ripple
(peak-to-peak value)
ton
turn-on time
Negative DC/DC converter
VNo
VR(p-p)
output voltage
amplitude ripple
(peak-to-peak value)
ton
turn-on time
MOS buffer amplifier
VIL
LOW level input voltage
VIH
HIGH level input voltage
tsw
switching time from 0 to 4.5 V
power-up mode; PA on
power-down mode; PA off
standby mode
IDS = 1.3 A
IDS = 0.4 A
with IPo = 2 mA
with IPo = 2 mA;
C1 = C2 = 100 nF; CP = 100 nF
with INo = 250 µA; Rext = 470 kΩ
with INo = 250 µA; C3 = 100 nF;
CN = 100 nF
2 Ω load at MOS outputs
MIN. TYP. MAX. UNIT
−
12
−
mA
−
5
−
mA
−
0.1 1
µA
−
0.18 −
Ω
−
0.5 −
Ω
−
600 −
kHz
11.3 11.8 12.3 V
−
20
−
mV
−
100 −
µs
−1.5 −1.8 −2.0 V
−
2
−
mV
−
280 −
µs
−
1.2 −
V
−
3.4 −
V
−
1
−
µs
1997 Oct 17
5
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