UPC8120T Ver la hoja de datos (PDF) - NEC => Renesas Technology

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Fabricante

UPC8120T

VARIABLE GAIN AMPLIFIER SILICON MMIC FOR TRANSMITTER AGC OF DIGITAL CELLULAR TELEPHONE

NEC => Renesas Technology 

µPC8119T, µPC8120T

ABSOLUTE MAXIMUM RATINGS

Parameter

Supply Voltage

Gain Control Voltage

Operating Ambient

Temperature

Storage Temperature

Power Dissipation of

Package

Symbol

VCC

VAGC

TA

TA = +25°C

TA = +25°C

Conditions

Tstg

PD

Mounted on double-sided copper-clad 50 × 50 × 1.6

mm epoxy glass PWB

TA = +85°C

Ratings

Unit

3.6

V

3.6

mA

−40 to +85

°C

–55 to +150

°C

280

mW

RECOMMENDED OPERATING CONDITIONS

Parameter

Supply Voltage

Gain Control Voltage

Input Level

Operating Ambient

Temperature

Operating Frequency

AGC Pin Drive Current

Symbol

VCC

VAGC

Pin

TA

MIN.

2.7

0.6

–

–

–40

TYP.

3.0

–

–

–

+25

MAX.

3.3

2.4

–18

–10

+85

Unit

V

V

dBm

°C

Notice

Same voltage should be applied to 4 and 5

pins.

IAGC ≤ 0.1 mA

Padj ≤ –60 dBc @ ∆f = ±50 kHzNote 1

Padj ≤ –60 dBc @ ∆f = ±600 kHzNote 2

f

100

–

1920 MHz With external output-matching

IAGC

0.5

–

–

mA VAGC ≤ 3.3 V

Notes 1. Adjacent Channel Interference (Padj) wave form condition: f = 950 MHz or 1440 MHz, π/4QPSK

modulation signal, data rate = 42 kbps, rolloff ratio = 0.5, PN9 bits (pseudo random pattern)

2. Adjacent Channel Interference (Padj) wave form condition: f = 1900 MHz, π/4QPSK modulation signal,

data rate = 384 kbps, rolloff ratio = 0.5, PN9 bits (pseudo random pattern)

4

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