CHDTA115TEPT Ver la hoja de datos (PDF) - CHENMKO CO., LTD.
Número de pieza
componentes Descripción
Fabricante
CHDTA115TEPT Datasheet PDF : 2 Pages
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RATING CHARACTERISTIC ( CHDTA115TEPT )
CHARA CTERISTICS
Tamb = 25 °C unless otherwise speciÞed.
SY MBOL
PARAMETER
CONDITIONS
BVCBO
BVCEO
BVEBO
VCE(sat)
ICBO
IEBO
hFE
R1
fT
Collector-Base breakdown voltage IC= -50uA
Collector-Emitter breakdown voltage IC= -1mA
Emitter-Base breakdown voltage IE= -50uA
Collector-Emitter Saturation voltage IC= -1mA; IB= -0.1mA
Collector-Base current
VCB= -50V
Emitter-Base current
VEB= -4V
DC current gain
IC= -1mA; VCE= -5.0V
Input resistor
Transition frequency
IE=5mA, VCE= -10.0V
f==100MHz
Not e
1.Pulse test: tp≤300uS; δ ≤0.02.
MIN.
-50.0
-50.0
-5.0
−
−
−
100
70
−
TY P . MAX.
−
−
−
−
−
−
−
-0.3
−
-0.5
−
-0.5
250
600
100
130
250
−
UNIT
V
V
V
V
uA
uA
KΩ
MHz
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