2N7002 Ver la hoja de datos (PDF) - Shanghai Leiditech Electronic Technology Co., Ltd
Número de pieza
componentes Descripción
Fabricante
2N7002
Shanghai Leiditech Electronic Technology Co., Ltd
2N7002 Datasheet PDF : 5 Pages
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2N7002
■ Electrical Characteristics (TJ=25℃ unless otherwise noted)
Parameter
Symbol
Conditions
Min
Typ
Max
Units
Static Parameter
Drain-Source Breakdown Voltage
BVDSS
VGS= 0V, ID=250μA
60
V
Zero Gate Voltage Drain Current
Gate-Body Leakage Current
IDSS
IGSS1
IGSS2
VDS=60V,VGS=0V
VGS= ±20V, VDS=0V
VGS= ±10V, VDS=0V
1
μA
±100
nA
±50
nA
Gate Threshold Voltage
VGS(th)
VDS= VGS, ID=250μA
1
1.5
2.5
V
Static Drain-Source On-Resistance
RDS(ON)
VGS= 10V, ID=-300mA
VGS= 4.5V, ID=200mA
1.2
2.5
Ω
1.3
3.0
Diode Forward Voltage
VSD
IS=300mA,VGS=0V
1.2
V
Maximum Body-Diode Continuous Current
IS
340
mA
Dynamic Parameters
Input Capacitance
Ciss
16
Output Capacitance
Coss
VDS=30V,VGS=0V,f=1MHZ
10
pF
Reverse Transfer Capacitance
Crss
5.5
Switching Parameters
Total Gate Charge
Qg
VGS=10V,VDS=30V,ID=0.3A
1.7
2.4
nC
Turn-on Delay Time
Turn-off Delay Time
tD(on)
tD(off)
VGS=10V,VDD=30V, ID=300mA,
RGEN=6Ω
5
ns
17
Reverse recovery Time
trr
VGS=0V,IS=300mA,VR=25V, dIS/dt=-
100A/μs
30
ns
A. Pulse Test: Pulse Width≤300us,Duty cycle ≤2%.
B. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch.
Rev :01.06.2018
2/5
www.leiditech.com
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