NESG2021M16 Ver la hoja de datos (PDF) - NEC => Renesas Technology

Número de pieza

componentes Descripción

Fabricante

NESG2021M16

NPN SILICON GERMANIUM RF TRANSISTOR

NEC => Renesas Technology 

INSERTION POWER GAIN, MAG, MSG

vs. COLLECTOR CURRENT

30

VCE = 2 V,

f = 3 GHz

25

MSG

MAG

20

15

|S21e|2

10

5

0

1

10

100

Collector Current IC (mA)

INSERTION POWER GAIN, MAG, MSG

vs. COLLECTOR CURRENT

30

VCE = 3 V,

f = 1 GHz

25

MSG

MAG

20

|S21e|2

15

10

5

0

1

10

100

Collector Current IC (mA)

INSERTION POWER GAIN, MAG, MSG

vs. COLLECTOR CURRENT

30

VCE = 3 V,

f = 3 GHz

25

MSG

MAG

20

15

|S21e|2

10

5

0

1

10

100

Collector Current IC (mA)

Remark The graphs indicate nominal characteristics.

NESG2021M16

INSERTION POWER GAIN, MAG, MSG

vs. COLLECTOR CURRENT

30

VCE = 2 V,

f = 5 GHz

25

20

MSG

MAG

15

10

|S21e|2

5

0

1

10

100

Collector Current IC (mA)

INSERTION POWER GAIN, MAG, MSG

vs. COLLECTOR CURRENT

30

VCE = 3 V,

f = 2 GHz

25

MSG

MAG

20

15

|S21e|2

10

5

0

1

10

100

Collector Current IC (mA)

INSERTION POWER GAIN, MAG, MSG

vs. COLLECTOR CURRENT

30

VCE = 3 V,

f = 5 GHz

25

20

MSG

MAG

15

10

|S21e|2

5

0

1

10

100

Collector Current IC (mA)

Data Sheet PU10393EJ03V0DS

7

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