NESG2021M16 Ver la hoja de datos (PDF) - NEC => Renesas Technology

Número de pieza

componentes Descripción

Fabricante

NESG2021M16

NPN SILICON GERMANIUM RF TRANSISTOR

NEC => Renesas Technology 

GAIN BANDWIDTH PRODUCT

vs. COLLECTOR CURRENT

30

VCE = 1 V,

f = 2 GHz

25

20

15

10

5

0

1

10

100

Collector Current IC (mA)

GAIN BANDWIDTH PRODUCT

vs. COLLECTOR CURRENT

30

VCE = 3 V,

f = 2 GHz

25

20

15

10

5

0

1

10

100

Collector Current IC (mA)

INSERTION POWER GAIN,

MAG, MSG vs. FREQUENCY

40

VCE = 2 V,

35

IC = 10 mA

30

MSG

MAG

25

20

MAG

MSG

15

|S21e|2

10

5

0

0.1

1

10

100

Frequency f (GHz)

Remark The graphs indicate nominal characteristics.

NESG2021M16

GAIN BANDWIDTH PRODUCT

vs. COLLECTOR CURRENT

30

VCE = 2 V,

f = 2 GHz

25

20

15

10

5

0

1

10

100

Collector Current IC (mA)

INSERTION POWER GAIN,

MAG, MSG vs. FREQUENCY

35

VCE = 1 V,

30

IC = 10 mA

MSG

25

MAG

20

15

|S21e|2

MAG

MSG

10

5

0

0.1

1

10

100

Frequency f (GHz)

INSERTION POWER GAIN,

MAG, MSG vs. FREQUENCY

40

VCE = 3 V,

35

IC = 10 mA

30

MSG

MAG

25

20

MAG

15

|S21e|2

MSG

10

5

0

0.1

1

10

100

Frequency f (GHz)

Data Sheet PU10393EJ03V0DS

5

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