2SA1162 Ver la hoja de datos (PDF) - Guilin Strong Micro-Electronics Co., Ltd.

Número de pieza

componentes Descripción

Fabricante

2SA1162

PNP General Purpose Transistor

Guilin Strong Micro-Electronics Co., Ltd. 

桂林斯壯微電子有限責任公司

Guilin Strong Micro-Electronics Co.,Ltd.

GMA1162(销售型號 2SA1162)

■DEVICE MARKING 打標

GMA1162(销售型號 2SA1162)

HFE:70-140=SO; 120-240=SY; 200-400=SG

■ELECTRICAL CHARACTERISTICS 電特性

(TA=25℃ unless otherwise noted 如無特殊說明，溫度爲 25℃)

Characteristic

特性參數

Symbol

Min

符號 最小值

Type

典型值

Max

最大值

Unit

單位

■OFF CHARACTERISTICS 截止電特性

Emitter Cutoff Current

發射極截止電流(VEB=-5.0v,IC=0)

IEBO

—

Collector Cutoff Current

集電極截止電流(VCB=-50v,IE=0)

ICBO

—

Collector Saturation Voltage

集電極飽和壓降(Ic=-100mA,IB=-10mA)

VCE(sat)

—

Base Saturation Voltage

基極飽和壓降(Ic=-100mA,IB=-10mA)

VBE(sat)

—

DC Current Gain

直流電流增益(VCE=-6.0v,IC=-2.0mA)

HFE

70

Gain Bandwidth Product

增益帶寬乘積(VCE=-10v,IC=-1.0mA)

fT

80

Noise Figure 噪声係數

(V CE=-6V,Ic=-0.1mA,f=1kHz,Rg=10kΩ)

NF

—

Output Capacitance 輸出電容

(VCB=-10v,IE=0,f=1.0MHz)

Cob

—

—

-0.1

uA

—

-0.1

uA

-0.1

-0.3

V

—

-1.0

V

—

400

—

—

MHz

1.0

10

dB

4.0

7.0

pF

1. FR-5=1.0×0.75×0.062in.

2. Alumina=0.4×0.3×0.024in.99.5%alumina.

Share Link: