BC238 Ver la hoja de datos (PDF) - Unspecified
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componentes Descripción
Fabricante
BC238 Datasheet PDF : 3 Pages
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Switching and Amplifier Applications
.Low Noise:BC239
BC237/238/239
NPN Epitaxial Silicon Transistor
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings Ta=25℃ unless otherwise noted
Symbol
VCES
VCEO
VEBO
Ic
Pc
TJ
TSTG
Parameter
Collector-Emitter Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current(DC)
Collector Power Dissipation
Junction Temperature
Storage Temperature
:BC237
:BC238/239
:BC237
:BC238/239
:BC237
:BC238/239
Electrical Characteristics Ta=25℃ unless otherwise noted
Symbol Parameter
Test Condition
BVCEO
Collector-Emitter Breakdown
:BC237
:BC238/239
IC=2mA, IB=0
BVEBO
Emitter Base Breakdown Voltage
:BC237
:BC238/239
IE=1µA, Ic=0
ICES
Collector Cut-off Current
:BC237
VCE=50V, VBE=0
:BC238/239
VCE=30V, VBE=0
hFE
DC Current Gain
VCE=5V, Ic=2mA
VCE(sat)
VBE(sat)
Collector-Emitter Saturation Voltage
Collector-Base Saturation Voltage
Ic=10mA, IB=0.5mA
Ic=100mA, IB=5mA
IC=10mA, IB=0.5mA
IC=100mA, IB=5mA
VBE(on)
Base-Emitter On Voltage
VCE=5V,Ic=2mA
fT
Current Gain Bandwidth Product
VCE=3V, Ic=0.5mA, f=100MHz
VCE=5V, Ic=10mA, f=100MHz
Cob
Output Capacitance
VCB=10V, IE=0,f=1MHz
Cib
Input Base Capacitance
VEB=0.5V, IC=0,f=1MHz
NF
Noise Figure
VCE=5V, IC=0.2mA,
:BC237/238
F=1KHz, RG=2kΩ
:BC239
VCE=5V, Ic=0.2mA
:BC239
RG=2k Ω, f=30-15kHz
hFE Classification
Classification
A
B
hFE
120~220
180~460
Value
50
30
45
25
6
5
100
500
150
-55~150
Units
V
V
V
V
V
V
mA
mW
℃
℃
Min. Typ. Max. Units
45
V
25
V
6
V
5
V
0.2
15
nA
0.2
15
nA
120
800
0.07 0.2
V
0.2
0.6
V
0.73 0.83 V
0.87 1.05 V
0.55 0.62 0.7
V
85
MHz
150 250
MHz
3.5
6
pF
8
pF
2
10
dB
4
dB
4
dB
C
380~800
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