4N25 Ver la hoja de datos (PDF) - American Microsemiconductor
Número de pieza
componentes Descripción
Fabricante
4N25 Datasheet PDF : 6 Pages
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The 4N25, 4N26, 4N27 and 4N28 devices consist of a gallium arsenide
infrared emitting diode optically coupled to a monolithic silicon phototransistor
detector.
• Most Economical Optoisolator Choice for Medium Speed, Switching Applications
• Meets or Exceeds All JEDEC Registered Specifications
Applications
• General Purpose Switching Circuits
• Interfacing and coupling systems of different potentials and impedances
• I/O Interfacing
• Solid State Relays
MAXIMUM RATINGS (TA = 25°C unless otherwise noted)
Rating
Symbol
INPUT LED
Reverse Voltage
VR
Forward Current — Continuous
IF
LED Power Dissipation @ TA = 25°C
PD
with Negligible Power in Output Detector
Derate above 25°C
OUTPUT TRANSISTOR
Collector–Emitter Voltage
Emitter–Collector Voltage
Collector–Base Voltage
Collector Current — Continuous
Detector Power Dissipation @ TA = 25°C
with Negligible Power in Input LED
Derate above 25°C
VCEO
VECO
VCBO
IC
PD
TOTAL DEVICE
Isolation Surge Voltage(1)
(Peak ac Voltage, 60 Hz, 1 sec Duration)
VISO
Total Device Power Dissipation @ TA = 25°C
PD
Derate above 25°C
Ambient Operating Temperature Range
TA
Storage Temperature Range
Tstg
Soldering Temperature (10 sec, 1/16ʺ from case)
TL
Value
3
60
120
1.41
30
7
70
150
150
1.76
7500
250
2.94
– 55 to +100
– 55 to +150
260
Unit
Volts
mA
mW
mW/°C
Volts
Volts
Volts
mA
mW
mW/°C
Vac(pk)
mW
mW/°C
°C
°C
°C
1. Isolation surge voltage is an internal device dielectric breakdown rating.
1. For this test, Pins 1 and 2 are common, and Pins 4, 5 and 6 are common.
Order this document
by 4N25/D
4N25
4N26
4N27
4N28
61
STANDARD THRU HOLE
SCHEMATIC
1
6
2
5
3
4
PIN 1. LED ANODE
2. LED CATHODE
3. N.C.
4. EMITTER
5. COLLECTOR
6. BASE
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