SUT507EF Ver la hoja de datos (PDF) - Kodenshi Auk Co., LTD

Número de pieza

componentes Descripción

Fabricante

SUT507EF

Epitaxial planar NPN silicon transistor

Kodenshi Auk Co., LTD 

Electrical Characteristics [Tr1,Tr2]

Characteristic

Symbol

Test Condition

Collector-emitter breakdown voltage BVCEO IC=1mA, IB=0

Collector cut-off current

ICBO

VCB=60V, IE=0

Emitter cut-off current

IEBO

VEB=5V, IC=0

DC current gain

hFE

VCE=6V, IC=2mA

Collector-emitter saturation voltage

VCE(sat) IC=100mA, IB=10mA

Base-emitter voltage

VBE

VCE=6V, IC=2mA

Transition frequency

fT

VCE=10V, IC=10mA

Collector output capacitance

Cob

VCB=10V, IE=0, f=1MHz

SUT507EF

(Ta=25°C)

Min. Typ. Max. Unit

50

-

-

V

-

-

0.1

μA

-

-

0.1

μA

120

-

400

-

-

-

0.25

V

- 0.65

-

V

-

200

-

MHz

-

2

-

pF

KSD-T5U001-001

2

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