THN6301KF Ver la hoja de datos (PDF) - AUK -> KODENSHI CORP

Número de pieza

componentes Descripción

Fabricante

THN6301KF

SiGe NPN Transistor

AUK -> KODENSHI CORP 

Semiconductor

□ Application

LNA and wide band amplifier up to GHz range

□ Features

o Low Noise Figure

NF = 1.1 dB at f = 1 GHz, VCE = 8 V, IC = 5 mA

o High Power Gain

MAG =18 dB at f = 1 GHz, VCE = 8 V, IC =15 mA

o High Transition Frequency

fT = 10 GHz at VCE = 8 V, IC = 15 mA

THN6301 Series

SiGe NPN Transistor

SOT-523

Unit in mm

□ hFE Classification

Marking AA1

AA2

hFE 125 to 300 80 to 160

□ Absolute Maximum Ratings

Symbol

Parameter

VCBO Collector to Base Breakdown Voltage

VCEO Collector to Emitter Breakdown Voltage

VEBO Emitter to Base Breakdown Voltage

Ic Collector Current (DC)

PT Total Power Dissipation

TSTG Storage Temperature

TJ Operating Junction Temperature

Caution : ESD sensitive device

Pin Configuration

Pin No

Symbol

1

B

2

E

3

C

Description

Base

Emitter

Collector

□ Available Package

Product

Package

THN6301S SOT-23

THN6301U SOT-323

THN6301Z SOT-343

THN6301E SOT-523

THN6301KF SOT-623F

Unit : mm

Dimension

2.9ⅹ1.3, 1.2t

2.0ⅹ1.25, 1.0t

2.0ⅹ1.25, 1.0t

1.6ⅹ0.8, 0.8t

1.4ⅹ0.8, 0.6t

Ratings

Unit

25

V

12

V

2.5

V

65

mA

150

mW

-65 ~ 150

℃

150

℃

1

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