IXBT32N300HV Ver la hoja de datos (PDF) - IXYS CORPORATION

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IXBT32N300HV

High Voltage, High Gain BIMOSFET™ Monolithic Bipolar MOS Transistor

IXYS CORPORATION 

Symbol Test Conditions

(TJ = 25°C Unless Otherwise Specified)

Characteristic Values

Min. Typ. Max.

gfS

IC = 32A, VCE = 10V, Note 1

16

26

S

Cies

Coes

Cres

VCE = 25V, VGE = 0V, f = 1MHz

3140

pF

124

pF

40

pF

Qg

Qge

IC = 32A, VGE = 15V, VCE = 1000V

Qgc

142

nC

20

nC

57

nC

td(on)

Resistive Switching Times, TJ = 25°C

50

ns

tr

IC = 32A, VGE = 15V

185

ns

td(off)

tf

VCE = 1250V, RG = 2

160

ns

720

ns

td(on)

tr

td(off)

tf

Resistive Switching Times, TJ = 125°C

IC = 32A, VGE = 15V

VCE = 1250V, RG = 2

58

515

165

630

ns

ns

ns

ns

RthJC

RthCS

(TO-247HV)

0.31 °C/W

0.21

°C/W

Reverse Diode

Symbol Test Conditions

(TJ = 25°C Unless Otherwise Specified)

VF

IF = 32A, VGE = 0V

trr

IF = 16A, VGE = 0V, -diF/dt = 100A/μs

IRM

VR = 100V, VGE = 0V

Characteristic Values

Min. Typ. Max.

2.1 V

1.5

μs

33

A

Note 1: Pulse Test, t  300μs, Duty Cycle, d  2%.

ADVANCE TECHNICAL INFORMATION

The product presented herein is under development. The Technical Specifications offered are

derived from a subjective evaluation of the design, based upon prior knowledge and experi-

ence, and constitute a "considered reflection" of the anticipated result. IXYS reserves the right

to change limits, test conditions, and dimensions without notice.

IXBT32N300HV

IXBH32N300HV

IXYS Reserves the Right to Change Limits, Test Conditions and Dimensions.

IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844

by one or more of the following U.S. patents: 4,860,072 5,017,508

4,881,106 5,034,796

5,049,961

5,063,307

5,187,117

5,237,481

5,381,025

5,486,715

6,162,665

6,259,123 B1

6,306,728 B1

6,404,065 B1

6,534,343

6,583,505

6,683,344 6,727,585 7,005,734 B2 7,157,338B2

6,710,405 B2 6,759,692 7,063,975 B2

6,710,463

6,771,478 B2 7,071,537

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