IXBT32N300HV Ver la hoja de datos (PDF) - IXYS CORPORATION
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Fabricante
IXBT32N300HV Datasheet PDF : 6 Pages
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Advance Technical Information
High Voltage, High Gain
BIMOSFETTM Monolithic
Bipolar MOS Transistor
IXBT32N300HV
IXBH32N300HV
VCES =
IC110 =
VCE(sat)
3000V
32A
3.2V
Symbol
VCES
VCGR
VGES
VGEM
IC25
IC110
ICM
SSOA
(RBSOA)
PC
TJ
TJM
Tstg
TL
TSOLD
Md
Weight
Test Conditions
Maximum Ratings
TC = 25°C to 150°C
TJ = 25°C to 150°C, RGE = 1M
Continuous
Transient
3000
V
3000
V
± 20
V
± 30
V
TC = 25°C
TC = 110°C
TC = 25°C, 1ms
80
A
32
A
280
A
VGE = 15V, TVJ = 125°C, RG = 10
ICM = 80
A
Clamped Inductive Load
VCES 2400
V
TC = 25°C
400
W
-55 ... +150
°C
150
°C
-55 ... +150
°C
Maximum Lead Temperature for Soldering
300
°C
Plastic Body for 10s
260
°C
Mounting Torque (TO-247HV)
1.13/10
Nm/lb.in.
TO-268HV
TO-247HV
4
g
6
g
Symbol Test Conditions
(TJ = 25°C Unless Otherwise Specified)
BVCES
IC = 250μA, VGE = 0V
VGE(th)
IC = 250μA, VCE = VGE
ICES
VCE = 0.8 • VCES, VGE = 0V
IGES
VCE(sat)
VCE = 0V, VGE = ± 20V
IC = 32A, VGE = 15V, Note 1
Characteristic Values
Min.
Typ. Max.
3000
V
2.5
5.0 V
TJ = 125°C
50 μA
2 mA
±100 nA
2.8
3.2 V
TJ = 125°C
3.5
V
TO-268HV (IXBT)
G
E
C (Tab)
TO-247HV (IXBH)
G
E
C
C (Tab)
G = Gate
E = Emitter
C = Collector
Tab = Collector
Features
High Blocking Voltage
High Voltage Packages
Low Conduction Losses
Advantages
Low Gate Drive Requirement
High Power Density
Applications:
Switched-Mode and Resonant-Mode
Power Supplies
Uninterruptible Power Supplies (UPS)
Laser Generators
Capacitor Discharge Circuits
AC Switches
© 2016 IXYS CORPORATION, All Rights Reserved
DS100706(02/16)
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