IXBA14N300HV Ver la hoja de datos (PDF) - IXYS CORPORATION

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componentes Descripción

Fabricante

IXBA14N300HV

High Voltage, High Gain BIMOSFET™ Monolithic Bipolar MOS Transistor

IXYS CORPORATION 

Fig. 13. Forward-Bias Safe Operating Area

@ TC = 25ºC

1000

VCE(sat) Limit

100

IXBA14N300HV IXBT14N300HV

IXBH14N300HV

Fig. 14. Forward-Bias Safe Operating Area

@ TC = 75ºC

1000

VCE(sat) Limit

100

10

1

0.1

0.01

1

TJ = 150ºC

TC = 25ºC

Single Pulse

10

100

VCE - Volts

25µs

100µs

1ms

10ms

DC

100ms

1,000

10,000

10

1

0.1

0.01

1

TJ = 150ºC

TC = 75ºC

Single Pulse

10

100

VCE - Volts

25µs

100µs

1ms

DC

1,000

10ms

100ms

10,000

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IXYS REF: B_14N300(4P) 5-16-14-A

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