IXBA14N300HV Ver la hoja de datos (PDF) - IXYS CORPORATION
Número de pieza
componentes Descripción
Fabricante
IXBA14N300HV Datasheet PDF : 6 Pages
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High Voltage, High Gain
BIMOSFETTM Monolithic
Bipolar MOS Transistor
IXBA14N300HV
IXBT14N300HV
IXBH14N300HV
VCES =
IC110 =
VCE(sat)
3000V
14A
2.7V
Symbol
VCES
VCGR
VGES
VGEM
IC25
IC110
ICM
SSOA
(RBSOA)
TSC
(SCSOA)
PC
TJ
TJM
Tstg
TL
TSOLD
FC
Md
Weight
Test Conditions
Maximum Ratings
TC = 25°C to 150°C
TJ = 25°C to 150°C, RGE = 1M
Continuous
Transient
3000
V
3000
V
± 20
V
± 30
V
TC = 25°C
TC = 110°C
TC = 25°C, 1ms
38
A
14
A
120
A
VGE = 15V, TVJ = 125°C, RG = 20
ICM = 120
A
Clamped Inductive Load
1500
V
VGE = 15V, TJ = 125°C,
RG = 82, VCE = 1500V, Non-Repetitive
10
μs
TC = 25°C
200
W
-55 ... +150
°C
150
°C
-55 ... +150
°C
Maximum Lead Temperature for Soldering
300
°C
1.6 mm (0.062in.) from Case for 10s
260
°C
Mounting Force (TO-263HV)
Mounting Torque (TO-247HV)
10..65 / 22..14.6
1.13/10
N/lb
Nm/lb.in
TO-263HV
TO-268HV
TO-247HV
2.5
g
4.0
g
6.0
g
Symbol Test Conditions
(TJ = 25°C Unless Otherwise Specified)
BVCES
IC = 250μA, VGE = 0V
VGE(th)
IC = 250μA, VCE = VGE
ICES
VCE = 0.8 • VCES, VGE = 0V
IGES
VCE(sat)
VCE = 0V, VGE = ± 20V
IC = 14A, VGE = 15V, Note 1
Characteristic Values
Min.
Typ. Max.
3000
V
3.0
5.0 V
TJ = 125°C
25 μA
750 μA
±100 nA
2.2
2.7 V
TJ = 125°C
2.7
V
TO-263HV (IXBA)
G
E
C (Tab)
TO-268HV (IXBT)
G
E
C ((Tab)
TO-247HV (IXBH)
G
E
C
G = Gate
E = Emitter
C (Tab)
C = Collector
Tab = Collector
Features
High Voltage Packages
High Blocking Voltage
Anti-Parallel Diode
Low Conduction Losses
Advantages
Low Gate Drive Requirement
High Power Density
Applications
Switch-Mode and Resonant-Mode
Power Supplies
Uninterruptible Power Supplies (UPS)
Laser Generators
Capacitor Discharge Circuits
AC Switches
© 2016 IXYS CORPORATION, All Rights Reserved
DS100613B(03/16)
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