IXBT42N300HV Ver la hoja de datos (PDF) - IXYS CORPORATION
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IXBT42N300HV Datasheet PDF : 6 Pages
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Preliminary Technical Information
High Voltage, BiMOSFETTM IXBT42N300HV
Monolithic Bipolar MOS
Transistor
IXBH42N300HV
VCES =
IC110 =
VCE(sat)
3000V
42A
3.0V
TO-268HV (IXBT)
Symbol Test Conditions
VCES
VCGR
VGES
VGEM
IC25
IC110
ICM
SSOA
(RBSOA)
TC = 25°C to 150°C
TJ = 25°C to 150°C, RGE = 1M
Continuous
Transient
TC = 25°C
TC = 110°C
TC = 25°C, 1ms
VGE = 15V, TVJ = 125°C, RG = 20
Clamped Inductive Load
TSC
(SCSOA)
PC
TJ
TJM
Tstg
TL
TSOLD
Md
Weight
VGE = 15V, TJ = 125°C,
RG = 82, VCE = 1500V, Non-Repetitive
TC = 25°C
1.6mm (0.062 in.) from Case for 10s
Plastic Body for 10 seconds
Mounting Torque (TO-247HV)
TO-268HV
TO-247HV
Maximum Ratings
3000
V
3000
V
± 25
V
± 35
V
104
A
42
A
400
A
ICM = 84
A
1500
V
10
μs
500
-55 ... +150
150
-55 ... +150
300
260
1.13/10
4
6
W
°C
°C
°C
°C
°C
Nm/lb.in
g
g
Symbol Test Conditions
(TJ = 25°C Unless Otherwise Specified)
BVCES
IC = 1mA, VGE = 0V
VGE(th)
IC = 1mA, VCE = VGE
ICES
VCE = 0.8 • VCES, VGE = 0V
IGES
VCE(sat)
VCE = 0V, VGE = ± 25V
IC = 42A, VGE = 15V, Note 1
Characteristic Values
Min. Typ. Max.
3000
V
3.0
5.0 V
TJ = 125°C
50 μA
250
μA
±200 nA
2.5
3.0 V
TJ = 125°C
3.1
V
G
E
C (Tab)
TO-247HV (IXBH)
G
E
C
C (Tab)
G = Gate
E = Emitter
C = Collector
Tab = Collector
Features
High Voltage Package
High Blocking Voltage
High Peak Current Capability
Low Saturation Voltage
FBSOA
SCSOA
Advantages
Low Gate Drive Requirement
High Power Density
Applications
Laser Generators
Capacitor Discharge Circuits
AC Switches
Protection Circuits
© 2014 IXYS CORPORATION, All Rights Reserved
DS100512A(12/14)
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