MMIX4B12N300 Ver la hoja de datos (PDF) - IXYS CORPORATION
Número de pieza
componentes Descripción
Fabricante
MMIX4B12N300 Datasheet PDF : 6 Pages
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Symbol Test Conditions
(TJ = 25°C Unless Otherwise Specified)
Characteristic Values
Min. Typ. Max.
gfS
IC = IC90, VCE = 10V, Note 1
6.5
10.8
S
IC(ON)
VGE = 20V, VCE = 15V, Note 1
200
A
Cies
Coes
Cres
VCE = 25V, VGE = 0V, f = 1MHz
1290
pF
56
pF
19
pF
Qg
Qge
IC = IC90, VGE = 15V, VCE = 1000V
Qgc
62
nC
13
nC
8.5
nC
td(on)
tr
td(off)
tf
Resistive Switching Times, TJ = 25°C
IC = IC90 VGE = 15V
VCE = 1250V, RG = 10Ω
64
140
180
540
ns
ns
ns
ns
td(on)
tr
td(off)
tf
Resistive Switching Times, TJ = 125°C
IC = IC90, VGE = 15V
VCE = 1250V, RG = 10Ω
65
395
175
530
ns
ns
ns
ns
RthJC
RthCS
RthJA
1.00 °C/W
0.05
°C/W
30
°C/W
Reverse Diode
Symbol Test Conditions
(TJ = 25°C Unless Otherwise Specified)
VF
IF = 12A, VGE = 0V
trr
IF = 6A, VGE = 0V, -diF/dt = 100A/μs
IRM
VR = 100V, VGE = 0V
Characteristic Values
Min. Typ. Max.
2.1 V
1.4
μs
21
A
Notes:
1. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%.
2. Device must be heatsunk for high temperature leakage current
measurements to avoid thermal runaway.
MMIX4B12N300
PRELIMINARY TECHNICAL INFORMATION
The product presented herein is under development. The Technical Specifications offered are derived
from data gathered during objective characterizations of preliminary engineering lots; but also may yet
contain some information supplied during a pre-production design evaluation. IXYS reserves the right
to change limits, test conditions, and dimensions without notice.
IXYS Reserves the Right to Change Limits, Test Conditions and Dimensions.
IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844
by one or more of the following U.S. patents: 4,860,072 5,017,508
4,881,106 5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1
6,534,343
6,583,505
6,683,344 6,727,585 7,005,734 B2 7,157,338B2
6,710,405 B2 6,759,692 7,063,975 B2
6,710,463
6,771,478 B2 7,071,537
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