MMIX1B15N300C Ver la hoja de datos (PDF) - IXYS CORPORATION

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Fabricante

MMIX1B15N300C

High Voltage, High Frequency, BiMOSFET™ Monolithic Bipolar MOS Transistor

IXYS CORPORATION 

Advance Technical Information

High Voltage,

High Frequency,

BiMOSFETTM Monolithic

Bipolar MOS Transistor

MMIX1B15N300C

VCES =

IC110 =

VCE(sat) 

3000V

15A

6.0V

(Electrically Isolated Tab)

C

Symbol Test Conditions

Maximum Ratings

VCES

VCGR

TJ = 25°C to 150°C

TJ = 25°C to 150°C, RGE = 1M

3000

V

3000

V

VGES

VGEM

Continuous

Transient

± 20

V

± 30

V

IC25

TC = 25°C

IC110

TC = 110°C

ICM

TC = 25°C, 1ms

37

A

15

A

300

A

SSOA

VGE = 15V, TVJ = 125°C, RG = 10

ICM = 120

A

(RBSOA) Clamped Inductive Load

VCES  1500

V

TSC

VGE = 15V, TJ = 125°C,

(SCSOA) RG = 52, VCE = 1500V, Non-Repetitive

10

μs

PC

TC = 25°C

300

W

TJ

-55 ... +150

°C

TJM

150

°C

Tstg

-55 ... +150

°C

TL

Maximum Lead Temperature for Soldering

300

°C

TSOLD

Plastic Body for 10s

260

°C

FC

Mounting Force

50..200/11..45

N/lb

VISOL

50/60Hz, 5 Seconds

4000

V~

Weight

8

g

G

E

Isolated Tab

C

E

G

G = Gate

C = Collector

E = Emitter

Features

 Silicon Chip on Direct-Copper Bond

(DCB) Substrate

 Isolated Mounting Surface

 4000V~ Electrical Isolation

 High Blocking Voltage

 High Frequency Operation

Symbol Test Conditions

(TJ = 25°C Unless Otherwise Specified)

BVCES

IC = 250μA, VGE = 0V

VGE(th)

IC = 250μA, VCE = VGE

ICES

VCE = VCES, VGE = 0V

Note 2, TJ = 125°C

IGES

VCE = 0V, VGE = ± 20V

VCE(sat)

IC = 15A, VGE = 15V, Note 1

TJ = 125°C

Characteristic Values

Min. Typ. Max.

3000

V

3.0

5.0 V

25 μA

5 mA

±200 nA

4.7

6.0 V

5.0

V

Advantages

 Low Gate Drive Requirement

 High Power Density

Applications

 Switch-Mode and Resonant-Mode

Power Supplies

© 2013 IXYS CORPORATION, All Rights Reserved

DS100566(10/13)

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