IXBF42N300 Ver la hoja de datos (PDF) - IXYS CORPORATION
Número de pieza
componentes Descripción
Fabricante
IXBF42N300 Datasheet PDF : 6 Pages
| |||
Preliminary Technical Information
High Voltage, BiMOSFETTM
Monolithic Bipolar MOS
Transistor
IXBF42N300
VCES =
IC110 =
VCE(sat) ≤
3000V
24A
3.0V
(Electrically Isolated Tab)
Symbol Test Conditions
Maximum Ratings
VCES
VCGR
VGES
VGEM
IC25
IC110
ICM
SSOA
(RBSOA)
TSC
(SCSOA)
PC
TJ
TJM
Tstg
TL
TSOLD
FC
VISOL
Weight
TC = 25°C to 150°C
TJ = 25°C to 150°C, RGE = 1MΩ
Continuous
Transient
3000
3000
± 25
± 35
TC = 25°C
TC = 110°C
TC = 25°C, 1ms
VGE = 15V, TVJ = 125°C, RG = 20Ω
Clamped Inductive Load
60
24
380
ICM = 84
VCE ≤ 0.8 • VCES
VGE = 15V, TJ = 125°C,
10
RG = 82Ω, VCE = 1500V, Non-Repetitive
TC = 25°C
240
-55 ... +150
150
-55 ... +150
1.6mm (0.062 in.) from Case for 10s
300
Plastic Body for 10 seconds
260
Mounting Force
20..120 / 4.5..27
50/60Hz, 1 Minute
3000
5
V
V
V
V
A
A
A
A
μs
W
°C
°C
°C
°C
°C
Nm/lb.in.
V~
g
Symbol Test Conditions
(TJ = 25°C Unless Otherwise Specified)
BVCES
IC = 1mA, VGE = 0V
VGE(th)
IC = 1mA, VCE = VGE
ICES
VCE = 0.8 • VCES, VGE = 0V
Note 2, TJ = 125°C
IGES
VCE = 0V, VGE = ± 25V
VCE(sat)
IC = 42A, VGE = 15V, Note 1
TJ = 125°C
Characteristic Values
Min. Typ. Max.
3000
V
3.0
5.0 V
50 μA
250
μA
±200 nA
2.5
3.0 V
3.1
V
ISOPLUS i4-PakTM
12
5
Isolated Tab
1 = Gate
2 = Emitter
5 = Collector
Features
z Silicon Chip on Direct-Copper Bond
(DCB) Substrate
z Isolated Mounting Surface
z 3000V~ Electrical Isolation
z High Blocking Voltage
z High Peak Current Capability
z Low Saturation Voltage
z FBSOA Rated
z SCSOA Rated
Advantages
z Low Gate Drive Requirement
z High Power Density
Applications
z Laser Generators
z Capacitor Discharge Circuits
z AC Switches
z Protection Circuits
© 2011 IXYS CORPORATION, All Rights Reserved
DS100325A(06/11)
Share Link: 