IXBR42N170 Ver la hoja de datos (PDF) - IXYS CORPORATION
Número de pieza
componentes Descripción
Fabricante
IXBR42N170 Datasheet PDF : 5 Pages
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IXBR42N170
Fig. 13. Resistive Turn-on
Rise Time vs. Junction Temperature
360
RG = 10Ω
320
VGE = 15V
VCE = 850V
280
I C = 84A
240
200
160
I C = 42A
120
80
25 35 45 55 65 75 85 95 105 115 125
TJ - Degrees Centigrade
Fig. 15. Resistive Turn-on
Switching Times vs. Gate Resistance
800
160
700
tr
td(on) - - - -
140
TJ = 125ºC, VGE = 15V
600
VCE = 850V
120
500
100
I C = 84A
400
80
300
60
200
I C = 42A
40
100
20
10 15 20 25 30 35 40 45 50 55
RG - Ohms
Fig. 17. Resistive Turn-off
Switching Times vs. Drain Current
1300
1200
1100
1000
440
tf
td(off) - - - -
420
RG = 10Ω, VGE = 15V
400
VCE = 850V
380
900
360
800
340
700
320
600
300
500
TJ = 25ºC, 125ºC
280
400
260
300
240
20 25 30 35 40 45 50 55 60 65 70 75 80 85
IC - Amperes
Fig. 14. Resistive Turn-on
Rise Time vs. Drain Current
360
320
RG = 10Ω
VGE = 15V
280
VCE = 850V
TJ = 125ºC
240
200
160
TJ = 25ºC
120
80
40
0
20 25 30 35 40 45 50 55 60 65 70 75 80 85
IC - Amperes
Fig. 16. Resistive Turn-off
Switching Times vs. Junction Temperature
900
380
tf
td(off) - - - -
800
RG = 10Ω, VGE = 15V
360
VCE = 850V
700
340
I C = 42A
600
320
500
300
400
I C = 84A
280
300
260
25 35 45 55 65 75 85 95 105 115 125
TJ - Degrees Centigrade
Fig. 18. Resistive Turn-off
Switching Times vs. Gate Resistance
1200
1800
1100
1000
900
tf
td(off) - - - -
TJ = 125ºC, VGE = 15V
VCE = 850V
1600
1400
1200
800
I C = 42A
700
1000
800
600
I C = 84A
600
500
400
400
200
300
0
10 15 20 25 30 35 40 45 50 55
RG - Ohms
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IXYS REF: B_42N170(7N)10-07-08
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