IXBR42N170 Ver la hoja de datos (PDF) - IXYS CORPORATION
Número de pieza
componentes Descripción
Fabricante
IXBR42N170 Datasheet PDF : 5 Pages
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IXBR42N170
55
50
45
40
35
30
25
20
15
10
5
0
0
Fig. 7. Transconductance
TJ = - 40ºC
25ºC
125ºC
20
40
60
80
100
120
140
160
IC - Amperes
Fig. 8. Forward Voltage Drop of
Intrinsic Diode
120
110
100
90
TJ = 25ºC
80
70
TJ = 125ºC
60
50
40
30
20
10
0
0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6 2.8 3.0 3.2
VF - Volts
Fig. 9. Gate Charge
16
14
VCE = 850V
I C = 42A
12
I G = 10mA
10
8
10,000
1,000
Fig. 10. Capacitance
Cies
Coes
6
100
4
Cres
2
f = 1 MHz
0
0
20 40 60 80 100 120 140 160 180 200
QG - NanoCoulombs
10
0
5
10
15
20
25
30
35
40
VCE - Volts
Fig. 11. Reverse-Bias Safe Operating Area
110
Fig. 12. Maximum Transient Thermal
Im pedance
1.00
100
90
80
70
60
0.10
50
40
30
TJ = 125ºC
20
RG = 10Ω
10
dV / dt < 10V / ns
0
0.01
200
400
600
800 1000 1200 1400 1600 1800
0.0001
0.001
0.01
0.1
1
10
VCE - Volts
Pulse Width - Seconds
IXYS reserves the right to change limits, test conditions and dimensions.
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