IXBR42N170 Ver la hoja de datos (PDF) - IXYS CORPORATION
Número de pieza
componentes Descripción
Fabricante
IXBR42N170 Datasheet PDF : 5 Pages
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Symbol
Test Conditions
(TJ = 25°C unless otherwise specified)
gfS
IC = 42A, VCE = 10V, Note 1
Cies
Coes
Cres
VCE = 25V, VGE = 0V, f = 1MHz
Qg
Qge
IC = 42A, VGE = 15V, VCE = 0.5 • VCES
Qgc
td(on)
tr
td(off)
tf
Resistive Switching times, TJ = 25°C
IC = 42A, VGE = 15V
VCE = 850V, RG = 10Ω
td(on)
tr
td(off)
tf
Resistive Switching times, TJ = 125°C
IC = 42A, VGE = 15V
VCE = 850V, RG = 10Ω
Characteristic Values
Min. Typ. Max.
24
32
S
3990
pF
225
pF
70
pF
188
nC
29
nC
76
nC
37
ns
139
ns
340
ns
665
ns
36
ns
188
ns
330
ns
740
ns
RthJC
RthCS
0.62 °C/W
0.15
°C/W
IXBR42N170
ISOPLUS247 (IXBR) Outline
Reverse Diode
Symbol Test Conditions
(TJ = 25°C unless otherwise specified)
VF
IF = 42A, VGE = 0V
trr
IF = 21A, VGE = 0V, -diF/dt = 100A/μs
IRM
VR = 100V
Characteristic Values
Min. Typ. Max.
2.8 V
1.32
μs
36
A
Note 1: Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%.
PRELIMINARY TECHNICAL INFORMATION
The product presented herein is under development. The Technical Specifications offered are derived
from data gathered during objective characterizations of preliminary engineering lots; but also may yet
contain some information supplied during a pre-production design evaluation. IXYS reserves the right
to change limits, test conditions, and dimensions without notice.
IXYS reserves the right to change limits, test conditions and dimensions.
IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844
by one or more of the following U.S. patents: 4,850,072 5,017,508
4,881,106 5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1
6,534,343
6,583,505
6,683,344 6,727,585 7,005,734 B2 7,157,338B2
6,710,405 B2 6,759,692 7,063,975 B2
6,710,463
6,771,478 B2 7,071,537
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