IXBR42N170 Ver la hoja de datos (PDF) - IXYS CORPORATION
Número de pieza
componentes Descripción
Fabricante
IXBR42N170 Datasheet PDF : 5 Pages
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Preliminary Technical Information
High Voltage, High Gain
BIMOSFETTM Monolithic
Bipolar MOS Transistor
IXBR42N170
VCES =
IC90 =
VCE(sat) ≤
1700V
32A
2.9V
Symbol
VCES
VCGR
VGES
VGEM
IC25
IC90
ICM
SSOA
(RBSOA)
PC
TJ
TJM
Tstg
TL
TSOLD
FC
VISOL
Weight
Test Conditions
TC = 25°C to 150°C
TJ = 25°C to 150°C, RGE = 1MΩ
Continuous
Transient
TC = 25°C
TC = 90°C
TC = 25°C, 1ms
VGE = 15V, TVJ = 125°C, RG = 10Ω
Clamped inductive load
TC = 25°C
1.6mm (0.062 in.) from case for 10s
Plastic body for 10 seconds
Mounting force
50/60 Hz, RMS
IISOL ≤ 1mA
t = 1min
t = 1s
Maximum Ratings
1700
V
1700
V
± 20
V
± 30
V
57
A
32
A
300
A
ICM = 100
A
VCES ≤ 1350
V
200
W
-55 ... +150
°C
150
°C
-55 ... +150
°C
300
260
20..120 / 4.5..27
°C
°C
Nm/lb.in.
2500
V~
3000
V~
5
g
Symbol Test Conditions
(TJ = 25°C unless otherwise specified)
BVCES
IC = 250μA, VGE = 0V
VGE(th)
IC = 250μA, VCE = VGE
ICES
VCE = 0.8 • VCES
VGE = 0V
IGES
VCE = 0V, VGE = ± 20V
VCE(sat)
IC = 42A, VGE = 15V, Note 1
Characteristic Values
Min. Typ. Max.
1700
V
2.5
5.5 V
TJ = 125°C
50 μA
1.5 mA
±100 nA
TJ = 125°C
2.9 V
2.7
V
ISOPLUS247TM
E153432
G
CE
Isolated Tab
G = Gate
C = Collector
E = Emitter
Features
z Silicon chip on Direct-Copper Bond
(DCB) substrate
z Isolated mounting surface
z 2500V electrical isolation
Advantages
z Low gate drive requirement
z High power density
Applications:
z Switched-mode and resonant-mode
power supplies
z Uninterruptible power supplies (UPS)
z Laser generator
z Capacitor discharge circuit
z AC switches
© 2008 IXYS CORPORATION, All rights reserved
DS100043(10/08)
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