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Número de pieza
componentes Descripción
IXBT12N300 Ver la hoja de datos (PDF) - IXYS CORPORATION
Número de pieza
componentes Descripción
Fabricante
IXBT12N300
High Voltage, High Gain BIMOSFET™ Monolithic Bipolar MOS Transistor
IXYS CORPORATION
IXBT12N300 Datasheet PDF : 5 Pages
1
2
3
4
5
IXBT12N300
IXBH12N300
Fig. 7. Transconductance
18
T
J
= - 40ºC
16
14
25ºC
12
125ºC
10
8
6
4
2
0
0
5
10
15
20
25
30
35
40
45
I
C
- Amperes
Fig. 8. Forward Voltage Drop of Intrinsic Diode
36
32
28
24
20
T
J
= 25ºC
T
J
= 125ºC
16
12
8
4
0
0
0.5
1
1.5
2
2.5
3
V
F
- Volts
16
14
V
CE
= 1kV
I
C
= 12A
12
I
G
= 10mA
Fig. 9. Gate Charge
10
8
6
4
2
0
0
10
20
30
40
50
60
Q
G
- NanoCoulombs
10,000
f = 1 MHz
1,000
100
Fig. 10. Capacitance
Cies
Coes
10
0
Cres
5
10
15
20
25
30
35
40
V
CE
- Volts
Fig. 11. Reverse-Bias Safe Operating Area
100
Fig. 12. Maximum Transient Thermal Impedance
1
80
60
0.1
40
T
J
= 125ºC
20
R
G
= 30
Ω
dv / dt < 10V / ns
0
0.01
500
1000
1500
2000
2500
3000
0.00001
0.0001
0.001
0.01
0.1
1
10
V
CE
- Volts
Pulse Width - Seconds
IXYS Reserves the Right to Change Limits, Test Conditions and Dimensions.
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