Schottky Barrier Diode
FEATURES
z Low forward voltage drop.
z Guard ring construction for transient protection.
z Low reverse recovery time.
z Low reverse capacitance.
APPLICATIONS
z Schottky barrier application.
SD103AX SOD-523
2
1.Cathode
1
2.Anode
■ Simplified outline(SOD-523)
Top View
■ Marking
Marking
S4
MAXIMUM RATING @ Ta=25°C unless otherwise specified
Parameter
Symbol
Limits
DC Reverse voltage
VR
Continuous forward current
IF
Repetitive peak forward current @t≤1.0s IFRM
Total power dissipation
Ptot
Total resistance junction to ambient
RθJA
Junction temperature
Tj
Storage temperature
Tstg
40
350
1
400
300
125
-65-125
Unit
V
mA
A
mW
℃/W
℃
℃
ELECTRICAL CHARACTERISTICS @ Ta=25°C unless otherwise specified
Parameter
Symbol Min. Typ. Max. Unit Conditions
Reverse breakdown voltage V(BR)R 40
Forward voltage
VF
Reverse current
IR
Diode capacitance
Cd
Reverse recovery time
trr
V
0.37
V
0.60
5.0 μA
50
pF
10
ns
IR=100μA
IF=20mA
IF=200mA
VR=30V
VR=0V,f=1MHz
IF=IR=50mA,RL=100Ω
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Dongguan YFW Electronics Co, Ltd.