RB551V-30 Ver la hoja de datos (PDF) - Galaxy Semi-Conductor

Número de pieza

componentes Descripción

Fabricante

RB551V-30

Schottky Barrier Diode

Galaxy Semi-Conductor 

Schottky Barrier Diode

FEATURES

 High current rectifier schottky diode

 Low voltage;Low inductance

 For power supply

Pb

Lead-free

APPLICATIONS

 High frequency rectification

Production specification

RB551V-30

SOD-323

ORDERING INFORMATION

Type No.

Marking

RB551V-30

D

Package Code

SOD-323

MAXIMUM RATING @ Ta=25℃ unless otherwise specified

Parameter

Symbol

Limits

Unit

Peak reverse voltage

VRM

30

V

DC reverse voltage

VR

20

V

Mean rectifying current

IO

0.5

A

Peak forward surge current

IFSM

2

A

Junction temperature

Tj

125

℃

Storage temperature

Tstg

-40 to +125

℃

ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified

Parameter

Symbol Min.

Typ.

Max. Unit Conditions

Forward voltage

VF

0.36

0.47

V

IF=100mA

IF=500mA

Reverse current

IR

100

μA

VR=20v

B022

Rev.A

www.gmesemi.com

1

Share Link: