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Número de pieza
componentes Descripción
IXXH30N60B3D1 Ver la hoja de datos (PDF) - IXYS CORPORATION
Número de pieza
componentes Descripción
Fabricante
IXXH30N60B3D1
XPT™ 600V IGBT GenX3™ w/ Diode
IXYS CORPORATION
IXXH30N60B3D1 Datasheet PDF : 7 Pages
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Fig. 19. Inductive Turn-on Switching Times vs.
Gate Resistance
160
90
140
t
ri
t
d(on)
- - - -
80
T
J
= 150ºC, V
GE
= 15V
120
V
CE
= 400V
70
100
80
60
I
C
= 48A
60
I
C
= 24A
50
40
40
30
20
20
0
10
10
20
30
40
50
60
70
80
R
G
- Ohms
Fig. 21. Inductive Turn-on Switching Times vs.
Junction Temperature
90
28
t
ri
t
d(on)
- - - -
80
R
G
= 10
Ω
, V
GE
= 15V
27
V
CE
= 400V
70
26
I
C
= 48A
60
25
50
24
40
23
30
I
C
= 24A
22
20
25
50
75
100
125
T
J
- Degrees Centigrade
21
150
IXXH30N60B3D1
Fig. 20. Inductive Turn-on Switching Times vs.
Collector Current
80
30
t
ri
t
d(on)
- - - -
70
R
G
= 10
Ω
, V
GE
= 15V
28
V
CE
= 400V
60
26
50
T
J
= 25ºC, 125ºC
24
40
22
30
20
20
18
10
16
10
15
20
25
30
35
40
45
50
I
C
- Amperes
IXYS Reserves the Right to Change Limits, Test Conditions,and Dimensions.
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