IXXH30N60B3D1 Ver la hoja de datos (PDF) - IXYS CORPORATION
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IXXH30N60B3D1 Datasheet PDF : 7 Pages
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Symbol Test Conditions
(TJ = 25°C Unless Otherwise Specified)
gfs
IC = 24A, VCE = 10V, Note 1
Cies
Coes
Cres
VCE = 25V, VGE = 0V, f = 1MHz
Qg(on)
Qge
Qgc
IC = 24A, VGE = 15V, VCE = 0.5 • VCES
td(on)
tri
Eon
td(off)
tfi
Eoff
Inductive load, TJ = 25°C
IC = 24A, VGE = 15V
VCE = 400V, RG = 10Ω
Note 2
td(on)
tri
Eon
td(off)
tfi
Eoff
Inductive load, TJ = 150°C
IC = 24A, VGE = 15V
VCE = 400V, RG = 10Ω
Note 2
RthJC
RthCS
Characteristic Values
Min.
Typ. Max.
8
14
S
1185
pF
137
pF
25
pF
39
nC
9
nC
17
nC
23
ns
36
ns
0.55
mJ
97
150 ns
125
ns
0.50 0.80 mJ
23
ns
34
ns
1.10
mJ
112
ns
180
ns
0.70
mJ
0.55 °C/W
0.21
°C/W
Reverse Diode (FRED)
Symbol Test Conditions
Characteristic Values
(TJ = 25°C Unless Otherwise Specified)
Min. Typ. Max.
VF
IF = 30A, VGE = 0V, Note 1
TJ = 150°C
2.7 V
1.6
V
IRM
IF = 30A, VGE = 0V, -diF/dt = 100A/μs,
TJ = 100°C
4A
trr
VR = 100V
TJ = 100°C
100
ns
IF = 1A, VGE = 0V, -diF/dt = 100A/μs, VR = 30V
25
ns
RthJC
0.9 °C/W
Notes:
1. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%.
2. Switching times & energy losses may increase for higher VCE(clamp), TJ or RG.
PRELIMINARY TECHNICAL INFORMATION
The product presented herein is under development. The Technical Specifications offered are derived
from data gathered during objective characterizations of preliminary engineering lots; but also may yet
contain some information supplied during a pre-production design evaluation. IXYS reserves the right
to change limits, test conditions, and dimensions without notice.
IXXH30N60B3D1
TO-247 (IXXH) Outline
123
∅P
e
Terminals: 1 - Gate
2 - Collector
3 - Emitter
Dim. Millimeter
Min. Max.
A
4.7 5.3
A1
2.2 2.54
A2
2.2 2.6
b
1.0 1.4
b1 1.65 2.13
b2 2.87 3.12
C
.4
.8
D 20.80 21.46
E 15.75 16.26
e 5.20 5.72
L 19.81 20.32
L1
4.50
∅P 3.55 3.65
Q 5.89 6.40
R 4.32 5.49
S 6.15 BSC
Inches
Min. Max.
.185 .209
.087 .102
.059 .098
.040 .055
.065 .084
.113 .123
.016 .031
.819 .845
.610 .640
0.205 0.225
.780 .800
.177
.140 .144
0.232 0.252
.170 .216
242 BSC
IXYS Reserves the Right to Change Limits, Test Conditions,and Dimensions.
IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844
by one or more of the following U.S. patents: 4,860,072 5,017,508
4,881,106 5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1
6,534,343
6,583,505
6,683,344 6,727,585 7,005,734 B2 7,157,338B2
6,710,405 B2 6,759,692 7,063,975 B2
6,710,463
6,771,478 B2 7,071,537
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