2N6290 Ver la hoja de datos (PDF) - Continental Device India Limited
Número de pieza
componentes Descripción
Fabricante
2N6290 Datasheet PDF : 3 Pages
| |||
2N6290
Collector current
Base current
Total power dissipation up to TC = 25°C
Junction temperature
Storage temperature
THERMAL RESISTANCE
From junction to ambient
From junction to case
CHARACTERISTICS
Tamb = 25°C unless otherwise specified
Collector cutoff current
IB = 0; VCE = 40 V
VBE = 1.5 V; VCE = 60 V
VBE = 1.5 V; VCE = 50 V; TC = 150°C
Emitter cut-off current
IC = 0; VEB = 5 V
Breakdown voltages
IC = 0.1 A; IB = 0
IC = 1 mA; IE = 0
IE = 1 mA; IC = 0
Saturation voltages
IC = 2.5 A; IB = 0.25 A
IC = 7 A; IB = 3 A
Base emitter on voltage
IC = 2.5 A; VCE = 4 V
IC = 7 A; VCE = 4 V
D.C. current gain
IC = 2.5 A; VCE = 4 V
IC
IB
Ptot
Tj
Tstg
Rth j–a
Rth j–c
ICEO
ICEX
ICEX
IEBO
VCEO(sus)*
VCBO
VEBO
VCEsat*
VCEsat*
VBE(on)*
VBE(on)*
hFE*
IC = 7 A; VCE = 4 V
hFE*
Small signal current gain
IC = 0.5 A; VCE = 4 V
hfe
Output capacitance at f = 1 MHz
IE = 0; VCB = 10 V
Co
Transition frequency
IC = 0.5 A; VCE = 4 V
fT
* Pulsed: pulse duration = 300 µs; duty cycle = 1.5%
max. 7.0 A
max. 3.0 A
max.
40 W
max. 150 ºC
–65 to +150 ºC
=
70 ° C/W
=
3.125 ° C/W
max.
max.
max.
max.
min.
min.
min.
max.
max.
max.
max.
min.
max.
min.
min.
max.
min.
1.0 mA
0.1 mA
2.0 mA
1 mA
50 V
60 V
5.0 V
1.0 V
3.5 V
1.5 V
3.0 V
30
150
2.3
20
250 pF
4 MHz
Continental Device India Limited
Data Sheet
Page 2 of 3
Share Link: 