BUX11 Ver la hoja de datos (PDF) - Comset Semiconductors

Número de pieza

componentes Descripción

Fabricante

BUX11

HIGH CURRENT, HIGH SPEED , HIGH POWER TRANSISTOR

Comset Semiconductors 

NPN BUX11

ELECTRICAL CHARACTERISTICS

TC=25°C unless otherwise noted

Symbol

VCEO(SUS)

VEB0(SUS)

ICEO

ICEX

IEBO

Ratings

Collector-Emitter

Sustaining Voltage (1)

Emitter-Base Breakdown

Voltage (1)

Collector Cutoff Current

Collector Cutoff Current

Emitter Cutoff Current

Test Condition(s)

IC=200 mA

IC=0A , IE=50 mA

VCE=160 V , IB=0A

VCE= VCEX , VBE= -1.5V

VCE= VCEX , VBE= -1.5V, Tcase = 125°C

VEB=5.0 V, IC=0

Min Typ Mx Unit

200 - -

V

7- -

V

- - 1.5 mA

- - 1.5

- - 6 mA

- -1

hFE

VCE(SAT)

VBE(SAT)

DC Current Gain (1)

Collector-Emitter

saturation Voltage (1)

Base-Emitter saturation

Voltage (1)

IC=6 A , VCE=2.0 V

IC=12 A , VCE=4.0 V

IC=6 A , IB=0.6 A

IC=12 A , IB=1.5 A

IC=12 A , IB=1.5 A

Symbol

IS/B

ES/B

fT

ton

Ratings

Test Condition(s)Sec

Second breakdown collector

current

Clamped ES/B Collector

current

Transition frequency

VCE=30 V , ts = 1s

VCE=140 V , ts = 1s

Vclamp=200 V , L=500 µH

VCE=15 V , IC=1 A , f=10 MHz

Turn-on time

IC=12 A , IB=1.5 A , VCC=150 V

ts

Storage time

tf

File time

IC=12 A , VCC=150 V

IB1 = -IB2 =1.5 A

(1) Pulse Duration = 300 µs, Duty Cycle <= 2%

20 - 60

10 - -

-

- 0.3 0.6

- 0.6 1.5 V

- 1.3 1.5

Min Typ Mx Unit

5- -

0.15 -

-

A

12 - -

8 - - MHz

- 0.3 1.0

- 1.2 1.8 µs

- 0.24 0.4

COMSET SEMICONDUCTORS

2/3

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