BD183(2012) Ver la hoja de datos (PDF) - Comset Semiconductors

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componentes Descripción

Fabricante

BD183
(Rev.:2012)

NPN SILICON TRANSISTOR POWER LINERAR AND SWITCHING APPLICATIONS

Comset Semiconductors 

BD181 – BD182 – BD183

ELECTRICAL CHARACTERISTICS

TC=25°C unless otherwise noted

Symbol

Ratings

Test Condition(s)

Min Typ Max Unit

BD181 -

-

IEBO

Emitter-Base Cutoff Current VEB= 7 V, IC=0

BD182 -

- 5.0 A

BD183 -

-

VCB=45 V

Tj=200°C

BD181 -

- 2.0

ICBO

Collector-Base Cutoff

Current

VCB=60 V

Tj=200°C

BD182 -

- 5.0 mA

VCB=80 V

Tj=200°C

BD183 -

- 5.0

VCEO(BR)

Collector-Emitter Breakdown

Voltage (*)

IC=200 mA, IB=0

BD181 45

BD182 60

BD183 80

-

-

-

-

-

-

V

VCE(SAT)

VBR(CER)

Collector-Emitter saturation

Voltage (*)

IC=3 A, IB=0.3 A

IC=4 A, IB=0.4 A

IC=3 A, IB=0.3 A

Collector-Emitter Breakdown IC=200 mA

Voltage (*)

RBE=100 Ω

BD181 -

BD182 -

BD183 -

BD181 55

BD182 70

BD183 85

- 1.0

- 1.0 V

- 1.0

-

-

-

-

V

-

-

fhfe

Collector-Emitter Breakdown

Voltage (*)

VCE=4.0 V, IC=3.0 A

BD181

BD182

BD183

15

-

- kHz

hFE

Static forward current

transfer ratio (*)

VCE=4.0 V, IC=3.0 A BD181 20

-

70

VCE=4.0 V, IC=4.0 A BD182 20

-

70

-

VCE=4.0 V, IC=3.0 A BD183 20

-

70

(*) Pulse Width ≈ 300 µs, Duty Cycle ∠ 2.0%

18/10/2012

COMSET SEMICONDUCTORS

2/3

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