BDT82F Ver la hoja de datos (PDF) - Inchange Semiconductor

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componentes Descripción

Fabricante

BDT82F

Silicon PNP Power Transistors

Inchange Semiconductor 

INCHANGE Semiconductor

isc Silicon PNP Power Transistors

isc Product Specification

BDT82F/84F/86F/88F

ELECTRICAL CHARACTERISTICS

TC=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

BDT82F

VCEO(SUS)

Collector-Emitter

Sustaining Voltage

BDT84F

BDT86F

IC= -30mA; IB= 0

BDT88F

VCE(sat)-1 Collector-Emitter Saturation Voltage IC= -5A; IB=B -0.5A

VCE(sat)-2 Collector-Emitter Saturation Voltage IC= -7A; IB=B -0.7A

VBE(on) Base-Emitter On Voltage

IC= -5A ; VCE= -4V

ICES

Collector Cutoff Current

VCE= 0.8VCBOmax; VBE= 0

ICBO

Collector Cutoff Current

VCB= VCBOmax; IE= 0

IEBO

Emitter Cutoff Current

VEB= -7V; IC= 0

hFE-1

DC Current Gain

IC= -50mA ; VCE= -10V

hFE-2

DC Current Gain

IC= -5A ; VCE= -4V

fT

Current-Gain—Bandwidth Product IC= -0.5A ; VCE= -10V

Switching Times

ton

Turn-On Time

toff

Turn-Off Time

IC= -7A; IB1= -IB2= -0.7A

MIN TYP. MAX UNIT

-60

-80

V

-100

-120

-1.0 V

-1.6 V

-1.5 V

-1 mA

-0.2 mA

-0.1 mA

40

40

20

MHz

1

μs

2

μs

isc Website：www.iscsemi.cn

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