2SC1623 Ver la hoja de datos (PDF) - SHENZHEN YONGERJIA INDUSTRY CO.,LTD
Número de pieza
componentes Descripción
Fabricante
2SC1623 Datasheet PDF : 1 Pages
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RoHS
2SC1623
2SC1623 TRANSISTOR (NPN)
D FEATURES
Power dissipation
T PCM: 200 mW (Tamb=25℃)
.,L Collector current
ICM: 100 mA
Collector-base voltage
O V(BR)CBO: 60 V
Operating and storage junction temperature range
C TJ, Tstg: -55℃ to +150℃
SOT-23-3L
1. BASE
2. EMITTER
3. COLLECTOR
2. 80¡ À0. 05
1. 60¡ À0. 05
IC ELECTRICAL CHARACTERISTICS(Tamb=25℃ unless otherwise specified)
Parameter
N Collector-base breakdown voltage
O Collector-emitter breakdown voltage
Emitter-base breakdown voltage
R Collector cut-off current
T Emitter cut-off current
C DC current gain
E Collector-emitter saturation voltage
L Base-emitter saturation voltage
Transition frequency
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
IEBO
hFE(1)
VCE(sat)
VBE(sat)
fT
Test conditions
Ic=100µA, IE=0
Ic=1mA, IB=0
IE=100µA, IC=0
VCB=60V, IE=0
VEB=5V, IC=0
VCE=6V, IC=1mA
IC=100mA, IB=10mA
IC=100mA, IB=10mA
VCE=6V, IC=10mA
MIN TYP MAX UNIT
60
V
50
V
5
V
0.1 µA
0.1 µA
90
600
0.3 V
1
V
250
MHz
E CLASSIFICATION OF hFE(1)
J Rank
L4
ERange
90-180
WMarking
L4
L5
135-270
L5
L6
200-400
L6
L7
300-600
L7
WEJ ELECTRONIC CO. Http:// www.wej.cn E-mail:wej@yongerjia.com
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