S8050 Ver la hoja de datos (PDF) - GUANGDONG HOTTECH INDUSTRIAL CO.,LTD.

Número de pieza

componentes Descripción

Fabricante

S8050

Plastic-Encapsulate Transistors

GUANGDONG HOTTECH INDUSTRIAL CO.,LTD. 

Plastic-Encapsulate Transistors

FEATURES

Complimentary to S8550

MARKING: J3Y

MAXIMUM RATINGS (TA=25

Parameter

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current -Continuous

Collector Power Dissipation

Junction Temperature

Storage Temperature

unless otherwise noted)

Symbol Value

VCBO

40

VCEO

25

VEBO

5

IC

0.5

PC

0.3

TJ

150

Tstg

-55 to +150

Unit

V

V

V

A

W

ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified)

Parameter

Symbol Test conditions

Collector-base breakdown voltage

VCBO

IC= 100μA, IE=0

Collector-emitter breakdown voltage

VCEO

IC=1mA, IB=0

Emitter-base breakdown voltage

VEBO

IE=100μA, IC=0

Collector cut-off current

ICBO

VCB=40 V , IE=0

Collector cut-off current

ICEO

VCB=20V , IE=0

Emitter cut-off current

IEBO

VEB= 5V , IC=0

DC current gain

HFE(1)

HFE(2)

VCE=1V, IC= 50mA

VCE=1V, IC= 500mA

Collector-emitter saturation voltage

VCE(sat)

IC=500 mA, IB= 50mA

Base-emitter saturation voltage

Transition frequency

VBE(sat)

fT

IC=500 mA, IB= 50mA

VCE=6V,

f=30MHz

IC= 20mA

CLASSIFICATION OF hFE

Rank

Range

L

120-200

H

200-350

S8050 (NPN)

1. BASE

2. EMITTER

3. COLLECTO

SOT-23

Min

40

25

5

120

50

150

Typ Max Unit

V

V

V

0.1 uA

0.1 μA

0.1 μA

350

0.6

V

1.2

V

MHz

GUANGDONG HOTTECH INDUSTRIAL CO,. LTD.

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