MMBT8050 Ver la hoja de datos (PDF) - Unspecified
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MMBT8050 Datasheet PDF : 4 Pages
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MMBT8050
ABSOLUTE MAXIMUM RATING ( TA=25°C, unless otherwise specified )
PARAMETER
SYMBOL
RATINGS
UNIT
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Dissipation(TA=25°C)
SOT-23
TO-92
VCBO
VCEO
VEBO
IC
PC
40
V
25
V
5
V
1000
mA
1
W
1
W
Junction Temperature
Storage Temperature
TJ
TSTG
+150
°C
-40 ~ +150
°C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ELECTRICAL CHARACTERISTICS (TA=25°C, unless otherwise specified)
PARAMETER
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-Off Current
Emitter Cut-Off Current
DC Current Gain(note)
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Current Gain Bandwidth Product
Output Capacitance
SYMBOL
TEST CONDITIONS
BVCBO IC = 100μA, IE = 0
BVCEO IC = 1mA, IB = 0
BVEBO IE = 100μA, IC =0
ICBO VCB = 35V,IE = 0
IEBO VEB = 5V, IC = 0
hFE1 VCE = 1V, IC = 1mA
hFE2 VCE = 1V, IC = 150 mA
hFE3 VCE = 1V, IC = 500mA
VCE(SAT) IC = 800mA, IB = 80mA
VBE(SAT) IC = 800mA, IB = 80mA
VBE(SAT) VCE = 1V, IC = 10mA
fT
VCE = 6V, IC = 20mA
Cob VCB = 10V, IE = 0, f = 1MHz
CLASSIFICATION OF hFE2
MIN TYP MAX UNIT
40
V
25
V
5
V
100 nA
100 nA
100
400
120
40
0.5 V
1.2 V
1.0 V
100
MHz
9.0
pF
RANK
RANGE
C
120-200
D
160-300
E
280-400
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