MMBT5551 Ver la hoja de datos (PDF) - Bytes
Número de pieza
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Fabricante
MMBT5551 Datasheet PDF : 3 Pages
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MMBT5551
TRANSISTOR(NPN)
FEATURES
As complementary type the PNP transistor
MMBT5401 is recommended.
Ideal for medium power amplification and switching
MAXIMUM RATINGS (TA=25℃ unless otherwise noted)
Symbol
Parameter
Value
Units
VCBO
Collector-Base Voltage
180
V
VCEO
Collector-Emitter Voltage
160
V
VEBO
Emitter-Base Voltage
6
V
IC
Collector Current -Continuous
0.6
A
PC
Collector Power Dissipation
300
mW
Tj
Junction Temperature
150
℃
Tstg
Storage Temperature
-55-150
℃
o
SOT-23
1．BASE
2．EMITTER
3．COLLECTOR
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter
breakdown
voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Collector output capacitance
Input capacitance
Noise figure
Symbol
V(BR)CBO
V(BR)CEO*
V(BR)EBO
ICBO
IEBO
hFE1*
hFE2*
hFE3*
VCEsat*
VBEsat*
fT
Cob
Cib
NF
Test conditions
IC=100μA, IE=0
IC= 1mA, IB=0
IE= 10μA, IC=0
VCB= 120V, IE=0
VEB= 4V, IC=0
VCE=5V, IC=1mA
VCE=5V, IC =10mA
VCE=5V, IC=50mA
IC=10mA, IB=1mA
IC=50mA, IB=5mA
IC=10mA, IB= 1mA
IC=50mA, IB= 5mA
VCE=10V, IC=10mA, f=100MHz
VCB=10V, IE=0, f=1MHz
VBE=0.5V, IC=0, f=1MHz
VCE=5V, Ic=0.25mA,
f=10Hz to 15.7KHz, Rs=1kΩ
MIN
180
160
6
80
100
50
100
TYP
MAX
UNIT
V
V
V
50
nA
50
nA
300
0.15
0.2
1
1
300
6
20
8
V
V
MHz
pF
pF
dB
http://www.bytesonic.com.tw/
Version 1.2
2018/7/3
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