AO3400A Ver la hoja de datos (PDF) - Shanghai Leiditech Electronic Technology Co., Ltd
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AO3400A Datasheet PDF : 6 Pages
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AO3400A
N-Channel Enhancement Mode Power MOSFET
Description
The AO3400A uses advanced trench technology to provide
excellent RDS(ON), low gate charge and operation with gate
voltages as low as 2.5V. This device is suitable for use as a
Battery protection or in other Switching application.
General Features
● VDS = 30V,ID = 5.8A
RDS(ON) < 59mΩ @ VGS=2.5V
RDS(ON) < 45mΩ @ VGS=4.5V
RDS(ON) < 41mΩ @ VGS=10V
● High power and current handing capability
● Lead free product is acquired
● Surface mount package
D
G
S
Schematic diagram
Marking and pin assignment
● PWM applications
● Load switch
● Power management
SOT-23 top view
Package Marking and Ordering Information
Device Marking
Device
Device Package
3400
AO3400A
SOT-23
Reel Size
Ø180mm
Tape width
8 mm
Quantity
3000 units
Absolute Maximum Ratings (TA=25℃unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Drain Current-Continuous
ID
Drain Current-Pulsed (Note 1)
IDM
Maximum Power Dissipation
PD
Operating Junction and Storage Temperature Range
TJ,TSTG
Thermal Characteristic
Thermal Resistance,Junction-to-Ambient (Note 2)
RθJA
Electrical Characteristics (TA=25℃unless otherwise noted)
Parameter
Symbol
Condition
Off Characteristics
Drain-Source Breakdown Voltage
BVDSS
VGS=0V ID=250μA
Zero Gate Voltage Drain Current
IDSS
VDS=30V,VGS=0V
Limit
30
±12
5.8
30
1.4
-55 To 150
Unit
V
V
A
A
W
℃
89
℃/W
Min Typ Max Unit
30 33
-
V
-
-
1
μA
Rev : 01.06.2014
1/6
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