BTB1580SN3-0-T1-G Ver la hoja de datos (PDF) - Cystech Electonics Corp.

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componentes Descripción

Fabricante

BTB1580SN3-0-T1-G

PNP Epitaxial Planar Transistor

Cystech Electonics Corp. 

CYStech Electronics Corp.

Spec. No. : C655N3

Issued Date : 2017.11.27

Revised Date :

Page No. : 2/7

Absolute Maximum Ratings (Ta=25C)

Parameter

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current (DC)

Collector Current (Pulse)

Thermal Resistance, Junction to Ambient

Thermal Resistance, Junction to Case

Power Dissipation @ TA=25°C

Power Dissipation @ TC=25°C

Opeearting Junction Temperature Range

Storage Temperature Range

Note : 1. Single Pulse Pw≦350μs, Duty≦2%.

Symbol

VCBO

VCEO

VEBO

IC

ICP

RθJA

RθJC

PD

Tj

Tstg

Limits

-120

-120

-5

-2

-4 (Note 1)

500

100

0.3

1.5

-55~+175

-55~+175

Unit

V

A

C/W

W

C

Characteristics (Ta=25C)

Symbol

BVCEO

BVCBO

ICBO

ICEO

IEBO

*VCE(sat)

*VBE(on)

*hFE1

*hFE2

Cob

Min.

-120

-120

-

-

-

-

1000

1000

-

Typ.

-

-

-

-

-

-

-

-

Max.

-

-

-100

-1

-2

-1.8

-2.2

-

-

200

Recommended Soldering Footprint

Unit

Test Conditions

V

IC=-1mA, IB=0

V

IC=-100μA, IE=0

nA VCB=-120V, IE=0

μA VCE=-120V, IB=0

mA VEB=-5V, IC=0

V

IC=-2A, IB=-2mA

V

VCE=-4V, IC=-2A

-

VCE=-4V, IC=-1A

-

VCE=-4V, IC=-2A

pF VCB=-10V, IE=0A, f=1MHz

*Pulse Test : Pulse Width 300μs, Duty Cycle2%

BTB1580SN3

CYStek Product Specification

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