BU508D Ver la hoja de datos (PDF) - New Jersey Semiconductor
Número de pieza
componentes Descripción
Fabricante
BU508D Datasheet PDF : 2 Pages
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Silicon NPN Power Transistor
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VcEO(SUS) Collector-Emitter Sustaining Voltage lc= 100mA; IB= 0
VcE(sat) Collector-Emitter Saturation Voltage lc= 4.5A;IB= 2A
VsE(sat) Base-Emitter Saturation Voltage
lc= 4.5A; IB= 2A
HFE
DC Current Gain
lc=1A; VCE=5V
ICES
Collector Cutoff Current
VCE= 1500V; VBE= 0
IEBO
Emitter Cutoff Current
VEB= 5V; lc= 0
VECF C-E Diode Forward Voltage
IF=4A
fi
Transition Frequency
lc=0.1A; VCE=5V
Cob Output Capacitance
lE=0;VCB=10V;f,est=1MHz
Switching Times
ts
Storage Time
tf
Fall Time
lc= 4.5A ; IB= 1 .4A
LB=10uH
BU508D
MIN TYP MAX UNIT
700
V
1.0
V
1.5
V
8
1.0
mA
300 mA
2
V
4
MHz
125
PF
7
us
1.0
us
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