BU508DX Ver la hoja de datos (PDF) - Inchange Semiconductor

Número de pieza

componentes Descripción

Fabricante

BU508DX

Silicon NPN Power Transistors

Inchange Semiconductor 

Inchange Semiconductor

Silicon NPN Power Transistors

CHARACTERISTICS

Tj=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

VCEO(SUS) Collector-emitter sustaining voltage IC=100mA ;IB=0,L=25mH

VCE(sat) Collector-emitter saturation voltage IC=4.5A ;IB=1.6A

VBE(sat) Base-emitter saturation voltage

ICES

Collector cut-off current

IEBO

Emitter cut-off current

IC=4.5A ;IB=1.6A

VCE=1500V, VBE=0

Tj=125℃

VEB=5.0V; IC=0

hFE

DC current gain

IC=0.5A ; VCE=5V

VF

Diode forward voltage

IF=4.5A

fT

Transition frequency

IE=0.1A ; VCE=5V

COB

Output capacitance

VCB=10V;IE=0;f=1.0MHz

Product Specification

BU508DX

MIN TYP. MAX UNIT

700

V

1.0

V

1.3

V

1.0

2.0

mA

300

mA

10

30

1.6

2.0

V

7

MHz

125

pF

2

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