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BU508DX Ver la hoja de datos (PDF) - Inchange Semiconductor

Número de pieza
componentes Descripción
Fabricante
BU508DX
Iscsemi
Inchange Semiconductor Iscsemi
BU508DX Datasheet PDF : 3 Pages
1 2 3
Inchange Semiconductor
Silicon NPN Power Transistors
Product Specification
BU508DX
DESCRIPTION
·With TO-3PML package
·High voltage,high speed
·With integrated efficiency diode
APPLICATIONS
·For use in horizontal deflection circuits
of colour TV receivers.
PINNING
PIN
DESCRIPTION
1
Base
2
Collector
3
Emitter
ABSOLUTE MAXIMUM RATINGS(TC=25)
SYMBOL
PARAMETER
CONDITIONS
VCBO
Collector-base voltage
Open emitter
VCEO
Collector-emitter voltage
Open base
IC
Collector current (DC)
ICP
Collector current (Pulse)
IB
Base current (DC)
IBM
Base current (Pulse)
Ptot
Total power dissipation
TC=25
Tj
Junction temperature
Tstg
Storage temperature
VALUE
1500
700
8
15
4
6
45
150
-65~150
UNIT
V
V
A
A
A
A
W

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