BUS132 Ver la hoja de datos (PDF) - Inchange Semiconductor

Número de pieza

componentes Descripción

Fabricante

BUS132

Silicon NPN Power Transistors

Inchange Semiconductor 

INCHANGE Semiconductor

isc Silicon NPN Power Transistors

isc Product Specification

BUS132/A

ELECTRICAL CHARACTERISTICS

TC=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

MIN TYP. MAX UNIT

BUS132

450

Collector-Emitter

VCEO(SUS) Sustaining Voltage

IC= 0.1A ; IB= 0; L= 10mH

V

BUS132A

500

Collector-Emitter

VCE(sat)-1 Saturation Voltage

BUS132 IC= 3A; IB= 0.4A

BUS132A IC= 3A; IB= 0.6A

2.5

V

1.0

Collector-Emitter

VCE(sat)-2 Saturation Voltage

BUS132 IC= 5A; IB= 0.66A

BUS132A IC= 5A; IB= 1A

3.0

V

1.5

VBE(sat)

Base-Emitter

Saturation Voltage

BUS132 IC= 5A; IB= 0.66A

BUS132A IC= 5A; IB= 1A

ICEV

Collector Cutoff Current

VCE=VCESMmax;VBE=-1.5V

VCE=VCESMmax;VBE=-1.5V;TJ=100℃

IEBO

Emitter Cutoff Current

VEB= 6V; IC= 0

1.5

V

1.5

0.25 mA

1.5

1 mA

hFE

DC Current Gain

COB

Output Capacitance

Switching Times , Resistive Load

IC= 8A ; VCE= 5V

5

IE= 0 ; VCB= 10V; ftest= 1kHz

350 pF

ton

Turn-On Time

tstg

Storage Time

tf

Fall Time

IC= 5A ;IB1= 0.66A; IB2= -1.3A

0.35

μs

1.5

μs

0.1

μs

isc website：www.iscsemi.cn

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