MBF10M Ver la hoja de datos (PDF) - Galaxy Semi-Conductor

Número de pieza

componentes Descripción

Fabricante

MBF10M

Silicon Bridge Rectifiers

Galaxy Semi-Conductor 

Silicon Bridge Rectifiers

Production specification

MBF10J--MBF10M

Features

 Glass passivated junction

 High surge current capability

 Saves space on printed circuit boards

 High temperature soldering guaranteed:

260°C/10 seconds

 RoHS Compliant

Mechanical Data

 Case: Molded plastic body RoHS-compliant

 Molding compound meets UL 94 V-0 flammability rating

 Terminals: Lead Free Plating (Matte Tin Finish.)

 Polarity indicator: As marked on body

Maximum Ratings (@TA = 25°C unless otherwise specified)

Characteristic

Symbol

MBF10J

MBF10K

Peak repetitive reverse voltage

VRRM

600

800

RMS reverse voltage

VRMS

420

560

DC blocking voltage

VDC

400

800

Maximum average forward output current

IF(AV)

1.0

Peak forward surge current,

@TJ= 25°C

IFSM

30

8.3ms single half-sine-wave

I2t Rating for fusing

@TJ= 25°C

I2t

3.7

MBF10M

1000

700

1000

Units

V

V

V

A

A

A2s

Thermal Characteristics

Parameter

Symbol

MBF10J

MBF10K

R ΘJA

67

Typical thermal resistance per leg

(Note 1)

R ΘJC

24

R ΘJL

13

Operating junction temperature range

TJ

- 55 ---- + 150

Storage temperature range

TSTG

- 55 ---- + 150

Note:

1. Device mounted on PCB with 10 mm x 20 mm x 0.1mm copper pad areas

MBF10M

Units

°C/W

°C

°C

MBF701AA

Rev.B

www.gmesemi.com

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