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BT136S-600E Datasheet PDF : 13 Pages
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WeEn Semiconductors
BT136S-600E
4Q Triac
Symbol
Parameter
IH
holding current
VT
on-state voltage
Dynamic characteristics
dVD/dt
rate of rise of off-state
voltage
Conditions
VD = 12 V; IT = 0.1 A; T2- G-;
Tj = 25 °C; Fig. 7
VD = 12 V; IT = 0.1 A; T2- G+;
Tj = 25 °C; Fig. 7
VD = 12 V; Tj = 25 °C; Fig. 9
IT = 5 A; Tj = 25 °C; Fig. 10
VDM = 402 V; Tj = 125 °C; (VDM = 67%
of VDRM); exponential waveform; gate
open circuit
Min Typ Max Unit
-
5
10
mA
-
11
25
mA
-
2.2 15
mA
-
1.4 1.7 V
-
50
-
V/µs
5. Pinning information
Table 2. Pinning information
Pin
Symbol Description
1
T1
main terminal 1
2
T2
main terminal 2
3
G
gate
mb
T2
mounting base; main
terminal 2
Simplified outline
mb
Graphic symbol
T2
T1
G
sym051
DPAK (TO252N)
6. Ordering information
Table 3. Ordering information
Type number
Package
Name
BT136S-600E
DPAK
Description
plastic single-ended surface-mounted package (DPAK); 3 leads
(one lead cropped)
Version
TO252N
BT136S-600E
Product data sheet
All information provided in this document is subject to legal disclaimers.
15 September 2018
© WeEn Semiconductors Co., Ltd. 2018. All rights reserved
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