2SA1381 Ver la hoja de datos (PDF) - Inchange Semiconductor

Número de pieza

componentes Descripción

Fabricante

2SA1381

Silicon PNP Power Transistor

Inchange Semiconductor 

isc Silicon PNP Power Transistor

INCHANGE Semiconductor

2SA1381

DESCRIPTION

·High voltage

·Low reverse transfer capacitance

·Excellent gain linearity for low THD

·High frequency

·Complement to 2SC3503

·Minimum Lot-to-Lot variations for robust device

performance and reliable operation

APPLICATIONS

·Audio voltage amplifier and current source

·CRT display ,video output

·General purpose amplifier

ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

SYMBOL

PARAMETER

VALUE UNIT

VCBO

Collector-Base Voltage

-300

V

VCEO Collector-Emitter Voltage

-300

V

VEBO

Emitter-Base Voltage

-5.0

V

IC

Collector Current-Continuous

Collector Power Dissipation

@ Ta=25℃

PC

Total Power Dissipation

@ TC=25℃

TJ

Junction Temperature

-100

mA

0.7

W

7

150

℃

Tstg

Storage Temperature Range

-55~150 ℃

isc website： www.iscsemi.com

isc & iscsemi is registered trademark

Share Link: