RBQ10NS100AFH
Data sheet
●Electrical Characteristics
Parameter
Forward voltage(1)
Reverse current(1)
Note (1) Value per diode
(Tj=25ºC unless otherwise specified)
Symbol
Conditions
VF
IF=5A
IR
VR=100V
Min. Typ. Max. Unit
- - 0.77 V
- - 80 μA
●Thermal Characteristics
Parameter
Symbol Min. Typ. Max. Unit
Thermal Resistance (Junction to case)(1) (2)
Per diode
Per device
RθJC
-
-
- 2.1 ℃/W
- 1.3 ℃/W
Thermal Resistance (Junction to ambient)(1) (3)
Notes (1) Value is guaranteed by design.
RθJA
-
- 55 ℃/W
(2) Transient dual interface measurement (TDIM) method.
(3) Mounted on 50 x 50 x 1.6mm FR4 board,single-sided copper,35μm thickness,reference footprint.
●Characteristic Curves
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2019/05/27_Rev.002