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BTA316-600ET Datasheet PDF : 14 Pages
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WeEn Semiconductors
BTA316-600ET
3Q Hi-Com Triac
8. Limiting values
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
VDRM
repetitive peak off-state
voltage
IT(RMS)
RMS on-state current
full sine wave; Tmb ≤ 126 °C; Fig. 1;
Fig. 2; Fig. 3
ITSM
non-repetitive peak on- full sine wave; Tj(init) = 25 °C; tp = 20 ms;
state current
Fig. 4; Fig. 5
I2t
dIT/dt
I2t for fusing
rate of rise of on-state
current
full sine wave; Tj(init) = 25 °C; tp = 16.7 ms
tp = 10 ms; SIN
IG = 0.2 A
IGM
PGM
PG(AV)
Tstg
Tj
peak gate current
peak gate power
average gate power
storage temperature
junction temperature
over any 20 ms period
20
Ptot
(W)
conduction form
angle, factor
(degrees) a
15
30
2.816
60
1.976
90
1.570
α
120
1.329
180
1.110
10
Min Max Unit
-
600 V
-
16
A
-
140 A
-
150 A
-
98
A²s
-
100 A/µs
-
2
A
-
5
W
-
0.5 W
-40 150 °C
-
150 °C
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α = 180°
120°
90°
60°
30°
5
0
0
2
4
6
8
10
12
α = conduction angle
a = form factor = IT(RMS) / IT(AV)
Fig. 1. Total power dissipation as a function of RMS on-state current; maximum values
14
16
IT(RMS) (A)
BTA316-600ET
Product data sheet
All information provided in this document is subject to legal disclaimers.
12 September 2018
© WeEn Semiconductors Co., Ltd. 2018. All rights reserved
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