BTA316-600ET Ver la hoja de datos (PDF) - WeEn Semiconductors

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BTA316-600ET

3Q Hi-Com Triac

WeEn Semiconductors 

BTA316-600ET

3Q Hi-Com Triac

12 September 2018

Product data sheet

1. General description

Planar passivated high commutation three quadrant triac in a SOT78 plastic package. The

"series ET" triac balances the requirements of commutation performance and gate sensitivity.

The "sensitive gate" "series ET" is intended for interfacing with low power drivers including

microcontrollers where "high junction operating temperature" capability is required.

2. Features and benefits

• 3Q technology for improved noise immunity

• Direct interfacing with low power drivers and microcontrollers

• Good immunity to false turn-on by dV/dt

• High commutation capability with sensitive gate

• High junction operating temperature capability

• High voltage capability

• Planar passivated for voltage ruggedness and reliability

• Triggering in three quadrants only

3. Applications

• Applications subject to high temperature

• Electronic thermostats (heating and cooling)

• High power motor controls e.g. washing machines and vacuum cleaners

• Refrigeration and air-conditioner compressor controls

4. Quick reference data

Table 1. Quick reference data

Symbol

Parameter

Conditions

VDRM

repetitive peak off-

state voltage

IT(RMS)

RMS on-state current full sine wave; Tmb ≤ 126 °C; Fig. 1;

Fig. 2; Fig. 3

ITSM

non-repetitive peak on- full sine wave; Tj(init) = 25 °C;

state current

tp = 20 ms; Fig. 4; Fig. 5

full sine wave; Tj(init) = 25 °C;

tp = 16.7 ms

Tj

junction temperature

Static characteristics

IGT

gate trigger current

VD = 12 V; IT = 0.1 A; T2+ G+;

Tj = 25 °C; Fig. 7

Min Typ Max Unit

-

-

600 V

-

-

16

A

-

-

140 A

-

-

150 A

-

-

150 °C

2

-

10

mA

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