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BTA316-600E Ver la hoja de datos (PDF) - WeEn Semiconductors

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BTA316-600E
WEEN
WeEn Semiconductors WEEN
BTA316-600E Datasheet PDF : 14 Pages
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BTA316-600E
3Q Hi-Com Triac
12 September 2018
Product data sheet
1. General description
Planar passivated high commutation three quadrant triac in a SOT78 plastic package. This "series
E" triac balances the requirements of commutation performance and gate sensitivity. The "sensitive
gate" "series E" is intended for interfacing with low power drivers including microcontrollers.
2. Features and benefits
3Q technology for improved noise immunity
Direct interfacing with low power drivers and microcontrollers
Good immunity to false turn-on by dV/dt
High commutation capability with sensitive gate
High voltage capability
Planar passivated for voltage ruggedness and reliability
Triggering in three quadrants only
3. Applications
Electronic thermostats (heating and cooling)
High power motor controls e.g. washing machines and vacuum cleaners
4. Quick reference data
Table 1. Quick reference data
Symbol
Parameter
Conditions
VDRM
repetitive peak off-
state voltage
IT(RMS)
RMS on-state current full sine wave; Tmb ≤ 101 °C; Fig. 1;
Fig. 2; Fig. 3
ITSM
non-repetitive peak on- full sine wave; Tj(init) = 25 °C;
state current
tp = 20 ms; Fig. 4; Fig. 5
full sine wave; Tj(init) = 25 °C;
tp = 16.7 ms
Tj
junction temperature
Static characteristics
IGT
gate trigger current
VD = 12 V; IT = 0.1 A; T2+ G+;
Tj = 25 °C; Fig. 7
VD = 12 V; IT = 0.1 A; T2+ G-;
Tj = 25 °C; Fig. 7
VD = 12 V; IT = 0.1 A; T2- G-;
Tj = 25 °C; Fig. 7
Min Typ Max Unit
-
-
600 V
-
-
16
A
-
-
140 A
-
-
150 A
-
-
125 °C
-
-
10
mA
-
-
10
mA
-
-
10
mA

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